Inventor · Brookline, MA, US

Hanching Fuh

33Patents
6h-index
17Co-inventors
62Inventor score

Filing activity: Jul 9, 2010 → May 28, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8330519B2 System and method of transistor switch biasing in a high power semiconductor switch Electricity 33 Active
US9160328B2 Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches Electricity 19 Active
US9013225B2 RF switches having increased voltage swing uniformity Electricity 10 Active
US9923594B2 Voltage swing uniformity in radio-frequency switches Electricity 8 Active
US9509363B2 Circuits having switches providing increased voltage swing uniformity Electricity 6 Active
US10410957B2 Body contacts for field-effect transistors Electricity 6 Active
US10032731B2 Voltage compensated switch stack Electricity 5 Active
US10389350B2 Stacked auxiliary field-effect transistor configurations for radio frequency applications Electricity 5 Active
US10361697B2 Switch linearization by compensation of a field-effect transistor Electricity 4 Active
US11289432B2 Voltage compensated switch stack Electricity 2 Active
US10014331B2 Field-effect transistor devices having proximity contact features Electricity 1 Active
US8618860B2 System and method of transistor switch biasing in a high power semiconductor switch Electricity 1 Active
US11842947B2 Fabricating field-effect transistors with interleaved source and drain finger configuration Electricity 0 Active
US10469072B2 Stacked auxiliary field-effect transistors with buffers for radio frequency applications Electricity 0 Active
US12176304B2 Devices and methods related to voltage compensated switch stack Electricity 0 Active
US10630283B2 Segmented main-auxiliary branch configurations for radio frequency applications Electricity 0 Active
US11810874B2 Devices and methods related to voltage compensated switch stack Electricity 0 Active
US12273100B2 Main-auxiliary field-effect transistor configurations Electricity 0 Active
US10574227B2 Main-auxiliary field-effect transistor structures for radio frequency applications Electricity 0 Active
US10630282B2 Hybrid main-auxiliary field-effect transistor configurations for radio frequency applications Electricity 0 Active
US11677395B2 Switches with main-auxiliary field-effect transistor configurations Electricity 0 Active
US11004774B2 Fabricating field-effect transistors with body contacts between source, gate and drain assemblies Electricity 0 Active
US11049890B2 Stacked field-effect transistors having proximity electrodes Electricity 0 Active
US10547303B2 Series main-auxiliary field-effect transistor configurations for radio frequency applications Electricity 0 Active
US10847445B2 Non-symmetric body contacts for field-effect transistors Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.