Laser device and process for fabricating such a laser device
US10014660B2 · kind B2 · utility
2Cited by
1References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 17, 2015 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Aug 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.