Alain Chantre
30Patents
9h-index
23Co-inventors
75Inventor score
Filing activity: Jul 8, 1992 → Nov 26, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9899800B2 | Laser device and process for fabricating such a laser device | Electricity | 31 | Active |
| US6177717A | Low-noise vertical bipolar transistor and corresponding fabrication process | Electricity | 27 | Expired |
| US6265275A | Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base | Electricity | 22 | Expired |
| US6384469B1 | Vertical bipolar transistor, in particular with an SiGe heterojunction base, and fabrication process | Electricity | 18 | Expired |
| US5367184A | Vertical JFET transistor with optimized bipolar operating mode and corresponding method of fabrication | Electricity | 16 | Expired |
| US6316818A | Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process | Electricity | 16 | Expired |
| US6472262B2 | Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor | Electricity | 11 | Expired |
| US6551891B1 | Process for fabricating a self-aligned vertical bipolar transistor | Electricity | 9 | Expired |
| US5340757A | Method of manufacturing a vertical field effect transistor | Electricity | 9 | Expired |
| US6656812B1 | Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process | Electricity | 7 | Expired |
| US10488587B2 | Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer | Electricity | 6 | Active |
| US6744080B2 | Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor | Electricity | 6 | Expired |
| US9461441B2 | Integrated hybrid laser source compatible with a silicon technology platform, and fabrication process | Electricity | 5 | Active |
| US9507089B2 | Method of manufacturing a photonic integrated circuit optically coupled to a laser of III-V material | Electricity | 4 | Active |
| US6436782B2 | Process for fabricating a self-aligned double-polysilicon bipolar transistor | Electricity | 4 | Expired |
| US6403437B1 | Method for making hyperfrequency transistor | Electricity | 3 | Expired |
| US6642096B2 | Bipolar transistor manufacturing | Electricity | 3 | Expired |
| US10014660B2 | Laser device and process for fabricating such a laser device | Electricity | 2 | Active |
| US10139563B2 | Method for making photonic chip with multi-thickness electro-optic devices and related devices | Physics | 1 | Active |
| US9640631B2 | Bipolar transistor manufacturing method | Electricity | 1 | Active |
| US9704967B2 | Heterojunction bipolar transistor | Electricity | 0 | Active |
| US7615455B2 | Integrated circuit bipolar transistor | Electricity | 0 | Active |
| US9362380B2 | Heterojunction bipolar transistor | Electricity | 0 | Active |
| US6902970B2 | Integrated circuit including, and fabrication method for producing, bipolar and MOSFET transistors | Electricity | 0 | Expired |
| US10877211B2 | Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.