Magnetic field annealing for integrated fluxgate sensors
US10017851B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Dec 22, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/05
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of magnetic forming an integrated fluxgate sensor includes providing a patterned magnetic core on a first nonmagnetic metal or metal alloy layer on a dielectric layer over a first metal layer that is on or in an interlevel dielectric layer (ILD) which is on a substrate. A second nonmagnetic metal or metal alloy layer is deposited including over and on sidewalls of the magnetic core. The second nonmagnetic metal or metal alloy layer is patterned, where after patterning the second nonmagnetic metal or metal alloy layer together with the first nonmagnetic metal or metal alloy layer encapsulates the magnetic core to form an encapsulated magnetic core. After patterning, the encapsulated magnetic core is magnetic field annealed using an applied magnetic field having a magnetic field strength of at least 0.1 T at a temperature of at least 150° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.