Chemical vapor deposition flow inlet elements and methods
US10017876B2 · kind B2 · utility
1Cited by
31References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 8, 2014 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Jan 13, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.