Chemically amplified resist material and resist pattern-forming method
US10018911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Nov 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.