Patent · US Active

System and method for fabricating metrology targets oriented with an angle rotated with respect to device features

US10018919B2 · kind B2 · utility

3Cited by
13References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 29, 2016
Grant dateJul 10, 2018
Priority date
Expiry dateJul 29, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70683
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A lithography system includes an illumination source including two illumination poles separated along a first direction and symmetrically distributed around an optical axis, a pattern mask to receive illumination from the illumination source, and a set of projection optics to generate an image corresponding to the pattern mask onto a sample. The pattern mask includes a metrology target pattern mask and device pattern mask elements. The device pattern mask elements are distributed along the first direction with a device separation distance. The metrology target pattern mask includes a set of metrology target pattern mask elements having a diffraction pattern corresponding to that of the device pattern mask elements. A metrology target generated on the sample associated with the metrology target pattern mask is characterizable along a second direction and has printing characteristics corresponding to those of device pattern elements generated on the sample associated with the device pattern mask elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.