Simulation scheme including self heating effect
US10019545B2 · kind B2 · utility
2Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2014 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Feb 4, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method includes receiving input information related to devices of an integrated circuit. A first simulation of the integrated circuit is performed over a first time period. Average temperature changes of the devices over the first time period are calculated. A second simulation of the integrated circuit is performed over a second time period using the average temperature changes of the devices. The first simulation and the second simulation are executed by a processor unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.