Inventor · Baoshan, TW

Cheng Hsiao

8Patents
2h-index
18Co-inventors
44Inventor score

Filing activity: Jan 15, 2003 → Dec 19, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US7141485B2 Shallow trench isolation structure with low sidewall capacitance for high speed integrated circuits Electricity 5 Expired
US10521538B2 Method and system for integrated circuit design with on-chip variation and spatial correlation Physics 3 Active
US10019545B2 Simulation scheme including self heating effect Physics 2 Active
US7421383B2 Method for extracting and modeling semiconductor device series resistance and for simulating a semiconductor device with use thereof Physics 2 Expired
US9904743B2 Method for analyzing interconnect process variation Physics 2 Active
US10216879B1 Method for establishing aging model of device and analyzing aging state of device with aging model Electricity 1 Active
US10860769B2 Method and system for integrated circuit design with on-chip variation and spatial correlation Physics 0 Active
US9558314B2 Method of designing circuit layout and system for implementing the same Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.