Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording method
US10020039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | May 2, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive device includes a magnetic free layer having first and second surfaces, the magnetic free layer being comprised of a ferromagnetic material having a perpendicular magnetic anisotropy, a spin current generation layer contacting the first surface of the magnetic free layer, a tunnel barrier layer having one surface contacting the second surface of the magnetic free layer, a reference layer contacting another surface of the tunnel barrier layer, and a leakage field generation layer including first and second leakage field generation layers each of which is comprised of a ferromagnetic material and generates a leakage field, an in-plane component of the leakage field at an part of the magnetic free layer is formed generating a domain wall having an in-plane magnetization component in the magnetic free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.