Hideo Ohno
83Patents
13h-index
83Co-inventors
87Inventor score
Filing activity: Nov 16, 1978 → Oct 25, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6727522B1 | Transistor and semiconductor device | Electricity | 3,995 | Expired |
| US6563174B2 | Thin film transistor and matrix display device | Electricity | 3,977 | Expired |
| US7064346B2 | Transistor and semiconductor device | Electricity | 3,964 | Expired |
| US8093589B2 | Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device | Electricity | 150 | Expired |
| US6556241B1 | Remote-controlled camera-picture broadcast system | Electricity | 87 | Expired |
| US6878962B1 | Semiconductor device | Electricity | 56 | Expired |
| US7205640B2 | Semiconductor device and display comprising same | Electricity | 50 | Expired |
| US5079601A | Optoelectronic devices based on intraband transitions in combinations of type I and type II tunnel junctions | Electricity | 35 | Expired |
| US6703645B2 | Spin filter | Electricity | 31 | Expired |
| US6476411B1 | Intersubband light emitting element | Electricity | 18 | Expired |
| US8173487B2 | Semiconductor element, method for manufacturing same, and electronic device including same | Emerging Cross-Sectional Technologies | 16 | Active |
| US5294287A | Class of magnetic materials for solid state devices | Emerging Cross-Sectional Technologies | 13 | Expired |
| US4253061A | Light converting type detectors | Physics | 13 | Expired |
| US9478309B2 | Magnetic-domain-wall-displacement memory cell and initializing method therefor | Electricity | 12 | Active |
| US10020039B2 | Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording method | Physics | 11 | Active |
| US6482729B2 | Method of generating spin-polarized conduction electron and semiconductor device | Electricity | 9 | Expired |
| US9941468B2 | Magnetoresistance effect element and magnetic memory device | Electricity | 7 | Active |
| US9466363B2 | Integrated circuit | Electricity | 7 | Active |
| US4637866A | Recovery method of tritium from tritiated water | Chemistry; Metallurgy | 5 | Expired |
| US8274818B2 | Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same | Electricity | 5 | Active |
| US8917541B2 | Magnetoresistance effect element and magnetic memory | Emerging Cross-Sectional Technologies | 5 | Active |
| US9135973B2 | Magnetoresistance effect element and magnetic memory | Electricity | 5 | Active |
| US9202545B2 | Magnetoresistance effect element and magnetic memory | Electricity | 4 | Active |
| US9450177B2 | Magnetoresistive element and magnetic memory | Electricity | 3 | Active |
| US7468542B2 | Magnetoresistive device and nonvolatile magnetic memory equipped with the same | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.