Nano-heterostructure
US10020190B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 14, 2017 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | May 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/484
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a nano-heterostructure. The nano-heterostructure includes a semiconductor layer, a first metallic carbon nanotube, a semiconducting carbon nanotube and a second metallic carbon nanotube. The semiconductor layer comprises a first surface and a second surface. The first metallic carbon nanotube is located on the first surface and extends in a first direction. The semiconducting carbon nanotube is located on the first surface and extends in the first direction. The semiconducting carbon nanotube is parallel and spaced away from the first metallic carbon nanotube. The second metallic carbon nanotube is located on the second surface and extends in a second direction. An angle forms between the first direction and the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.