Jin Zhang
28Patents
3h-index
14Co-inventors
52Inventor score
Filing activity: Oct 9, 2014 → Jun 16, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9773990B1 | Semiconductor device | Emerging Cross-Sectional Technologies | 9 | Active |
| US10748992B2 | Semiconductor element | Electricity | 5 | Active |
| US10883917B2 | Method for imaging 1-D nanomaterials | Physics | 4 | Active |
| US10600925B2 | Solar battery | Emerging Cross-Sectional Technologies | 1 | Active |
| US9947869B2 | Method for making nano-heterostructure | Emerging Cross-Sectional Technologies | 1 | Active |
| US10424480B2 | Method for making thin film transistor with nanowires as masks | Electricity | 1 | Active |
| US10020190B2 | Nano-heterostructure | Electricity | 1 | Active |
| US10712276B2 | Device for imaging 1-D nanomaterials | Physics | 1 | Active |
| US11482673B2 | Solar battery | Emerging Cross-Sectional Technologies | 0 | Active |
| US10347856B2 | Light detector | Emerging Cross-Sectional Technologies | 0 | Active |
| US10424638B2 | Semiconductor device | Electricity | 0 | Active |
| US10424479B2 | Method for making nano-scaled channels with nanowires as masks | Electricity | 0 | Active |
| US10814597B2 | Method for preparing suspended two-dimensional nanomaterials | Performing Operations; Transporting | 0 | Active |
| US10755402B2 | Method for distinguishing semiconducting nanowires from metallic nanowires | Physics | 0 | Active |
| US10013753B2 | Method for evaluating bandgap distributions of nanowires | Physics | 0 | Active |
| US10847737B2 | Light detector | Emerging Cross-Sectional Technologies | 0 | Active |
| US10906286B2 | Method for transferring two-dimensional nanomaterials | Emerging Cross-Sectional Technologies | 0 | Active |
| US10312354B2 | Method for making thin film transistor | Electricity | 0 | Active |
| US10777378B2 | Transmission electron microscope micro-grid and method for making the same | Electricity | 0 | Active |
| US10224400B2 | Semiconductor device | Electricity | 0 | Active |
| US11011628B2 | Method for making thin film transistor with nanowires as masks | Electricity | 0 | Active |
| US10205098B2 | Semiconductor structure and semiconductor device using the same | Electricity | 0 | Active |
| US10814598B2 | Method for transferring two-dimensional nanomaterials | Performing Operations; Transporting | 0 | Active |
| US11217727B2 | Light emitting diode | Electricity | 0 | Active |
| US10205096B2 | Nano-heterostructure | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.