Method for forming polysilicon
US10020192B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 22, 2015 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Jan 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02422
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming polysilicon on a semiconductor substrate that include providing amorphous silicon on a semiconductor substrate, exposing at least an area of the amorphous silicon to a first laser beam and a second laser beam, characterized in that during exposing the area to the second laser beam no displacement of the laser beam relative to the area occurs. In addition, the use of such method for producing large grain polysilicon. In particular, the use of such method for producing vertical grain polysilicon. Further, the use of such method for producing sensors, MEMS, NEMS, Non Volatile Memory, Volatile memory, NAND Flash, DRAM, Poly Si contacts and interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.