Power semiconductor module and method for producing a power semiconductor module

US10020237B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alexander Hoehn · Soest, DE
• Georg Borghoff · Warstein, DE

Key dates

• Filing date: Oct 28, 2015
• Grant date: Jul 10, 2018
• Expiry date: Oct 28, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13091
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. The power semiconductor module also has an electrically conductive terminal block connected firmly and electrically conductively to the circuit carrier and/or to the semiconductor component. The terminal block has a screw thread that is accessible from an outer side of the module housing. A method for producing such a power semiconductor module is also provided.