Split rail structures located in adjacent metal layers
US10020261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Oct 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first metal layer of a semiconductor device includes a plurality of first metal lines that each extend along a first axis, and a first rail structure that extends along the first axis. The first rail structure is physically separated from the first metal lines. A second metal layer is located over the first metal layer. The second metal layer includes a plurality of second metal lines that each extend along a second axis orthogonal to the first axis, and a second rail structure that extends along the first axis. The second rail structure is physically separated from the second metal lines. The second rail structure is located directly over the first rail structure. A plurality of vias is located between the first metal layer and the second metal layer. A subset of the vias electrically interconnects the first rail structure to the second rail structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.