High resolution solder resist material for silicon bridge application
US10020262B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Jun 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with disclosed embodiments, there are provided high resolution solder resist material for silicon bridge application. For instance, in accordance with one embodiment, there is a silicon bridge disclosed, the silicon bridge having therein a solder resist layer formed from a high resolution solder resist material; in which the solder resist layer includes a polymer material which hardens when exposed to light radiation; in which the solder resist layer further includes spherical particles; a plurality of vias patterned into the solder resist layer by a photolithography process, the plurality of vias forming a set of larger vias and a set of smaller vias patterned into the solder resist layer by the photolithography process, each of the larger vias being greater in size than each of the smaller vias, and further in which each of the smaller vias are less than half the size of any one of the larger vias; in which the larger vias and the smaller vias provide through-silicon vias (TSVs) interconnects through the solder resist layer electrically interfacing two or more functional semiconductor devices affixed to the silicon bridge; and the silicon bridge further having there…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.