Backside illuminated image sensor
US10020338B2 · kind B2 · utility
1Cited by
16References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2015 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Dec 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.