Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
US10023956B2 · kind B2 · utility
7Cited by
32References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 9, 2015 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Nov 21, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatuses for conditioning chambers using a two-stage process involving a low bias and a high bias stage are provided. Methods also involve clamping a protective electrostatic chuck cover to a pedestal by applying a bias to the electrostatic chuck during the high bias stage while cooling the protective electrostatic chuck cover, such as by flowing helium to the backside of the cover.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.