Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
US10025187B2 · kind B2 · utility
4Cited by
6References
41Claims
0Family size
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Key dates
| Filing date | Feb 17, 2015 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Mar 3, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F220/382
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.