TOKYO ELECTRON LIMITED
10,970Patents
7,466Active
10,970Granted
60Portfolio score
Filing activity: Nov 8, 1976 → Oct 24, 2024 · 1,881 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7837425B2 | Transportation apparatus and drive mechanism | Emerging Cross-Sectional Technologies | 1,027 | Active |
| US5382311A | Stage having electrostatic chuck and plasma processing apparatus using same | Electricity | 899 | Expired |
| US5595606A | Shower head and film forming apparatus using the same | Chemistry; Metallurgy | 858 | Expired |
| US6161500A | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions | Chemistry; Metallurgy | 739 | Expired |
| US8506713B2 | Film deposition apparatus and film deposition method | Electricity | 716 | Active |
| US7235137B2 | Conductor treating single-wafer type treating device and method for semi-conductor treating | Chemistry; Metallurgy | 712 | Expired |
| USD570868S1 | Computer generated image for a display panel or screen | General | 664 | Expired |
| US6740853B1 | Multi-zone resistance heater | Electricity | 639 | Expired |
| US5503875A | Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily | Chemistry; Metallurgy | 603 | Expired |
| USD553104S1 | Absorption board for an electric chuck used in semiconductor manufacture | General | 576 | Expired |
| US6368987B1 | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions | Chemistry; Metallurgy | 571 | Expired |
| US6872259B2 | Method of and apparatus for tunable gas injection in a plasma processing system | Electricity | 560 | Expired |
| US6673196B1 | Plasma processing apparatus | Electricity | 555 | Expired |
| USD609652S1 | Wafer attracting plate | General | 544 | Expired |
| US6576062B2 | Film forming apparatus and film forming method | Chemistry; Metallurgy | 542 | Expired |
| US7740705B2 | Exhaust apparatus configured to reduce particle contamination in a deposition system | Chemistry; Metallurgy | 536 | Active |
| US6951587B1 | Ceramic heater system and substrate processing apparatus having the same installed therein | Chemistry; Metallurgy | 536 | Expired |
| USD691974S1 | Holding pad for transferring a wafer | General | 536 | Active |
| US7651583B2 | Processing system and method for treating a substrate | Electricity | 535 | Expired |
| US8041197B2 | Heating apparatus, heat treatment apparatus, computer program and storage medium | Electricity | 534 | Active |
| US8683943B2 | Plasma process apparatus and plasma process method | Emerging Cross-Sectional Technologies | 532 | Active |
| US5718574A | Heat treatment apparatus | Electricity | 529 | Expired |
| US8282769B2 | Shower head and plasma processing apparatus having same | Electricity | 529 | Active |
| US7723648B2 | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system | Electricity | 528 | Active |
| USD593969S1 | Processing chamber for manufacturing semiconductors | General | 524 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.