Non-volatile memory with read disturb detection for open blocks
US10026488B2 · kind B2 · utility
4Cited by
12References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 18, 2016 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Sep 2, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory system includes technology for detecting read disturb in open blocks. In one embodiment, the system determines whether a particular block of non-volatile memory cells has been subjected to a minimum number of open block read operations and performs sensing operations for memory cells connected to an open word line of the particular block. The number of errors in the sensed data is determined. If the number of errors is greater than a limit, then the system takes an action to mitigate the read disturb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.