Sandisk Technologies, Inc.
4,407Patents
4,391Active
4,407Granted
70Portfolio score
Filing activity: Nov 21, 2002 → Jul 1, 2024 · 335 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9123577B2 | Air gap isolation in non-volatile memory using sacrificial films | Electricity | 451 | Active |
| US8045391B2 | Non-volatile memory and method with improved sensing having bit-line lockout control | Physics | 416 | Active |
| US9449987B1 | Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors | Electricity | 391 | Active |
| US9053808B2 | Flash memory with targeted read scrub algorithm | Physics | 327 | Active |
| US8375146B2 | Ring bus structure and its use in flash memory systems | Physics | 307 | Active |
| US8187936B2 | Ultrahigh density vertical NAND memory device and method of making thereof | Electricity | 294 | Active |
| US8349681B2 | Ultrahigh density monolithic, three dimensional vertical NAND memory device | Electricity | 262 | Active |
| US9230973B2 | Methods of fabricating a three-dimensional non-volatile memory device | Electricity | 203 | Active |
| US10283493B1 | Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof | Electricity | 189 | Active |
| US9595530B1 | Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memory | Electricity | 184 | Active |
| US9673257B1 | Vertical thin film transistors with surround gates | Electricity | 182 | Active |
| US9124300B2 | Error correction coding in non-volatile memory | Electricity | 174 | Active |
| US9311970B2 | Systems and methods of storing data | Physics | 170 | Active |
| US9501398B2 | Persistent storage device with NVRAM for staging writes | Physics | 170 | Active |
| US9355022B2 | Systems and methods for intelligent flash management | Physics | 166 | Active |
| US9311969B2 | Systems and methods of storing data | Physics | 164 | Active |
| US10115681B1 | Compact three-dimensional memory device having a seal ring and methods of manufacturing the same | Electricity | 148 | Active |
| US8193054B2 | Ultrahigh density vertical NAND memory device and method of making thereof | Electricity | 146 | Active |
| US8198672B2 | Ultrahigh density vertical NAND memory device | Electricity | 141 | Active |
| US8658499B2 | Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device | Electricity | 137 | Active |
| US9023719B2 | High aspect ratio memory hole channel contact formation | Electricity | 133 | Active |
| US9343358B1 | Three-dimensional memory device with stress compensation layer within a word line stack | Electricity | 129 | Active |
| US8878278B2 | Compact three dimensional vertical NAND and method of making thereof | Electricity | 120 | Active |
| US8040744B2 | Spare block management of non-volatile memories | Physics | 119 | Active |
| US8283228B2 | Method of making ultrahigh density vertical NAND memory device | Electricity | 118 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.