Method of reducing residual contamination in singulated semiconductor die
US10026605B2 · kind B2 · utility
197Cited by
14References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Oct 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.