Multi-metal fill with self-align patterning
US10026647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2017 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Apr 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes methods which employ a patterning photolithography/etch operations to form self-aligned interconnects with multi-metal gap fill. For example, the method includes a first pattern structure and a second pattern structure formed over a dielectric layer. Each of the first and second pattern structures includes a pair of spacers, and a center portion between the pair of spacers. A first opening, self-aligned to a space between the first and second pattern structures, is formed in the dielectric layer. A first conductive material is deposited in the first opening. The center portion of the second pattern structure is removed to form a void above the dielectric layer and between the pair of spacers of the second pattern structure. A second opening, self-aligned to the void, is formed in the dielectric layer; and a second conductive material is deposited in the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.