Tai-I Yang
87Patents
5h-index
57Co-inventors
71Inventor score
Filing activity: Jun 1, 2012 → Jul 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9390965B2 | Air-gap forming techniques for interconnect structures | Electricity | 10 | Active |
| US9716035B2 | Combination interconnect structure and methods of forming same | Electricity | 6 | Active |
| US9269609B2 | Semiconductor isolation structure with air gaps in deep trenches | Electricity | 6 | Active |
| US9837354B2 | Hybrid copper structure for advance interconnect usage | Electricity | 5 | Active |
| US10290580B2 | Hybrid copper structure for advance interconnect usage | Electricity | 5 | Active |
| US9735232B2 | Method for manufacturing a semiconductor structure having a trench with high aspect ratio | Electricity | 3 | Active |
| US11088020B2 | Structure and formation method of interconnection structure of semiconductor device | Electricity | 3 | Active |
| US9576896B2 | Semiconductor arrangement and formation thereof | Electricity | 2 | Active |
| US10049941B2 | Semiconductor isolation structure with air gaps in deep trenches | Electricity | 2 | Active |
| US10534273B2 | Multi-metal fill with self-aligned patterning and dielectric with voids | Electricity | 2 | Active |
| US10991618B2 | Semiconductor device and method of manufacture | Electricity | 2 | Active |
| US9559134B2 | Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors | Electricity | 2 | Active |
| US10026647B2 | Multi-metal fill with self-align patterning | Electricity | 2 | Active |
| US10276498B2 | Interconnect structure with air-gaps | Electricity | 2 | Active |
| US10177242B2 | Semiconductor arrangement and formation thereof | Electricity | 2 | Active |
| US11004740B2 | Structure and method for interconnection with self-alignment | Electricity | 2 | Active |
| US10714421B2 | Structure and formation method of semiconductor device with self-aligned conductive features | Electricity | 2 | Active |
| US10930551B2 | Methods for fabricating a low-resistance interconnect | Electricity | 2 | Active |
| US10676351B2 | Nano-electromechanical system (NEMS) device structure and method for forming the same | Performing Operations; Transporting | 2 | Active |
| US9583434B2 | Metal line structure and method | Electricity | 2 | Active |
| US9698242B2 | Semiconductor arrangement and formation thereof | Electricity | 2 | Active |
| US10340181B2 | Interconnect structure including air gap | Electricity | 2 | Active |
| US10000373B2 | Nano-electromechanical system (NEMS) device structure and method for forming the same | Performing Operations; Transporting | 1 | Active |
| US9633897B2 | Air-gap forming techniques for interconnect structures | Electricity | 1 | Active |
| US9875967B2 | Interconnect structure with air-gaps | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.