Semiconductor device and manufacturing method thereof
US10026715B2 · kind B2 · utility
7Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2016 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Mar 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to the present embodiment includes a semiconductor substrate, an insulating film and a conductive film. The insulating film is disposed on a first surface of the semiconductor substrate. The insulating film covers a semiconductor element. The conductive film penetrates the semiconductor substrate across from the first surface to a second surface opposite to the first surface. On the second surface, a trench continuously or intermittently exists across from a first end part side of the second surface to a second end part side thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.