Patent assignee · JP · COMPANY

TOSHIBA MEMORY CORPORATION

2,972Patents
2,965Active
2,972Granted
66Portfolio score

Filing activity: Feb 23, 2011 → Dec 7, 2021

Most-cited patents

PatentTitleAreaCited byStatus
US10180875B2 Pool-level solid state drive error correction Electricity 165 Active
US10074667B1 Semiconductor memory device Electricity 117 Active
US10147736B2 Semiconductor memory device and method for manufacturing same Electricity 77 Active
US9846541B2 Memory system for controlling perforamce by adjusting amount of parallel operations Physics 60 Active
USD902164S1 Integrated circuit card General 46 Active
US10679710B2 Semiconductor device Physics 44 Active
US9946596B2 Global error recovery system Electricity 39 Active
US10297578B2 Memory device Electricity 34 Active
US9922717B1 Memory device to executed read operation using read target voltage Physics 33 Active
US10276585B2 Semiconductor memory device Electricity 28 Active
US9767913B2 Memory system performing read of nonvolatile semiconductor memory device Physics 28 Active
US10211166B2 Semiconductor device and method of manufacturing the same Electricity 27 Active
US9830983B1 Memory system and writing method Physics 27 Active
US10249377B2 Semiconductor memory device Physics 25 Active
US10224240B1 Distortion reduction of memory openings in a multi-tier memory device through thermal cycle control Electricity 24 Active
US10037813B2 Semiconductor memory device Physics 21 Active
US10593617B2 Semiconductor device Electricity 21 Active
US9767910B1 Semiconductor memory device and memory system Physics 20 Active
US10090315B2 Semiconductor memory device in which an array chip including three-dimensionally disposed memory cells bonded to a control circuit chip Electricity 19 Active
US9799406B2 Memory system Electricity 18 Active
US9830079B2 Memory system for controlling nonvolatile memory Physics 18 Active
US9818487B2 Semiconductor memory device Physics 17 Active
US9960173B2 Semiconductor memory device Electricity 16 Active
US9792996B1 Semiconductor memory device which applies multiple voltages to the word line Physics 16 Active
US10388343B2 Magnetoresistive element and magnetic memory Electricity 16 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.