Method of manufacturing enhanced device and enhanced device
US10026834B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2016 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jul 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A method of manufacturing an enhanced device and an enhance device are provided. The method comprises: preparing a substrate, and forming a non-planar structure in the substrate; depositing a nitride channel layer on the substrate, a gate region, a source region and a drain region being defined on the nitride channel layer, the gate region of the nitride channel layer having a non-planar structure transferred from the non-planar structure of the substrate; depositing a nitride barrier layer on the nitride channel layer, the nitride barrier layer having a non-planar structure located above and corresponding to the non-planar structure of the nitride channel layer, the nitride barrier layer and the nitride channel layer forming a nitride channel layer/nitride barrier layer heterojunction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.