Kai Cheng
108Patents
4h-index
43Co-inventors
64Inventor score
Filing activity: Jun 22, 2005 → Jan 19, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7621173B2 | Nano-identation ultrasonic detecting system and method thereof | Physics | 27 | Active |
| US8487316B2 | Method of manufacturing an integrated semiconductor substrate structure with device areas for definition of GaN-based devices and CMOS devices | Electricity | 11 | Active |
| US7666765B2 | Method for forming a group III nitride material on a silicon substrate | Electricity | 8 | Active |
| US7989925B2 | Method for forming a group III nitride material on a silicon substrate | Electricity | 5 | Active |
| US10164111B2 | Semiconductor device and methods of manufacture | Electricity | 4 | Active |
| US7532329B2 | Fiber optic interferometric position sensor and measurement method thereof | Physics | 4 | Active |
| US9812540B2 | Enhanced switch device and manufacturing method therefor | Electricity | 3 | Active |
| US8373204B2 | Semiconductor device and method of manufacturing thereof | Electricity | 3 | Active |
| US9269800B2 | Enhanced device and manufacturing method therefor | Electricity | 3 | Active |
| US9640624B2 | Semiconductor device and manufacturing method therefor | Electricity | 3 | Active |
| US7349099B2 | Fiber optic interferometric position sensor and measurement method thereof | Physics | 2 | Expired |
| US10409482B2 | Electronic system, touch sensitive processing apparatus and method thereof for switching to normal operation mode upon receiving touch gesture in power saving mode | Emerging Cross-Sectional Technologies | 1 | Active |
| US8623685B2 | Method of manufacturing a light emitting diode | Electricity | 1 | Active |
| US9722064B2 | Isolated gate field effect transistor and manufacture method thereof | Electricity | 1 | Active |
| US8437001B2 | Method for forming a nanostructure penetrating a layer | Emerging Cross-Sectional Technologies | 1 | Active |
| US10700208B2 | Semiconductor device and methods of manufacture | Electricity | 1 | Active |
| US10026834B2 | Method of manufacturing enhanced device and enhanced device | Electricity | 1 | Active |
| US11335827B2 | Methods for manufacturing semiconductor device | Electricity | 1 | Active |
| US10516042B2 | III group nitride semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US11133295B2 | Methods for manufacturing a display device | Electricity | 1 | Active |
| US9098848B2 | Safety cover design for financial transaction device | Physics | 1 | Active |
| US11949040B2 | Methods for manufacturing semiconductor device | Electricity | 0 | Active |
| US12414405B2 | Substrate stripping method for semiconductor structure by irradiating AlGaN | Electricity | 0 | Active |
| US12107142B2 | Method for manufacturing vertical device | Electricity | 0 | Active |
| US9862601B2 | Plasmonic force manipulation in nanostructures | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.