Patent · US Active

Photovoltaic device and method of formation

US10026861B2 · kind B2 · utility

1Cited by
5References
48Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 16, 2012
Grant dateJul 17, 2018
Priority date
Expiry dateJul 10, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.