Photovoltaic device and method of formation
US10026861B2 · kind B2 · utility
1Cited by
5References
48Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2012 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jul 10, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.