Igor Sankin
23Patents
8h-index
18Co-inventors
72Inventor score
Filing activity: Feb 22, 2002 → May 13, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6767783B2 | Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation | Electricity | 48 | Expired |
| US8017981B2 | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making | Electricity | 25 | Active |
| US6693308B2 | Power SiC devices having raised guard rings | Electricity | 19 | Expired |
| US7202528B2 | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making | Electricity | 19 | Expired |
| US7977713B2 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making | Electricity | 14 | Active |
| US6815304B2 | Silicon carbide bipolar junction transistor with overgrown base region | Electricity | 12 | Expired |
| US7556994B2 | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making | Electricity | 11 | Active |
| US7274083B1 | Semiconductor device with surge current protection and method of making the same | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7820511B2 | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making | Electricity | 7 | Active |
| US7560325B1 | Methods of making lateral junction field effect transistors using selective epitaxial growth | Electricity | 7 | Active |
| US7119380B2 | Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors | Electricity | 6 | Expired |
| US7314799B2 | Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making | Electricity | 5 | Expired |
| US7242040B2 | Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors | Electricity | 5 | Active |
| US8502282B2 | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making | Electricity | 3 | Active |
| US10026861B2 | Photovoltaic device and method of formation | Emerging Cross-Sectional Technologies | 1 | Active |
| US7510921B2 | Self-aligned silicon carbide semiconductor devices and methods of making the same | Electricity | 1 | Active |
| US7960198B2 | Method of making a semiconductor device with surge current protection | Emerging Cross-Sectional Technologies | 1 | Active |
| US8269262B2 | Vertical junction field effect transistor with mesa termination and method of making the same | Electricity | 0 | Active |
| US9209096B2 | Photoluminescence measurement | Physics | 0 | Active |
| US11870002B2 | Methods and systems for use with photovoltaic devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US8729628B2 | Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making | Electricity | 0 | Active |
| US8507335B2 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making | Electricity | 0 | Active |
| US7470967B2 | Self-aligned silicon carbide semiconductor devices and methods of making the same | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.