Patent · US Active

Method for forming ohmic contacts

US10032880B2 · kind B2 · utility

3Cited by

2References

20Claims

0Family size

Assignee

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

Aurore CONSTANT · Oudenaarde, BE
Peter Coppens · Duffel, BE

Key dates

Filing date	Oct 10, 2016
Grant date	Jul 24, 2018
Priority date	—
Expiry date	Oct 13, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/475
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. The passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.