Semiconductor device
US10032886B2 · kind B2 · utility
5Cited by
12References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2016 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Jun 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.