Jong-Mil Youn
29Patents
8h-index
39Co-inventors
75Inventor score
Filing activity: Sep 15, 1988 → May 14, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6147385A | CMOS static random access memory devices | Emerging Cross-Sectional Technologies | 19 | Expired |
| US9048219B2 | High integration semiconductor device and method for fabricating the same | Electricity | 16 | Active |
| US9922979B2 | Integrated circuit device and method of manufacturing the same | Electricity | 11 | Active |
| US9240411B1 | Semiconductor device and method for fabricating the same | Electricity | 10 | Active |
| US5814538A | Methods of forming BiCMOS devices having dual-layer emitter electrodes and thin-film transistors therein | Electricity | 9 | Expired |
| US9515182B2 | High-integration semiconductor device and method for fabricating the same | Electricity | 8 | Active |
| US9698264B2 | Semiconductor device and method for fabricating the same | Electricity | 8 | Active |
| US4950616A | Method for fabricating a BiCMOS device | Emerging Cross-Sectional Technologies | 8 | Expired |
| US9461173B2 | Semiconductor device and method for fabricating the same | Electricity | 7 | Active |
| US7112831B2 | Ternary content addressable memory cell | Emerging Cross-Sectional Technologies | 7 | Expired |
| US10153270B2 | Electrostatic discharge protection devices | Electricity | 7 | Active |
| US5077226A | Manufacturing method for BiCMOS devices | Electricity | 7 | Expired |
| US9502417B2 | Semiconductor device having a substrate including a first active region and a second active region | Electricity | 6 | Active |
| US4970174A | Method for making a BiCMOS semiconductor device | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4912055A | Method of fabricating a semiconductor device | Electricity | 6 | Expired |
| US10084088B2 | Method for fabricating a semiconductor device having a first fin active pattern and a second fin active pattern | Electricity | 5 | Active |
| US10032886B2 | Semiconductor device | Electricity | 5 | Active |
| US5173760A | BiCMOS semiconductor device | Electricity | 5 | Expired |
| US9209184B2 | High-integration semiconductor device and method for fabricating the same | Electricity | 4 | Active |
| US9478551B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 4 | Active |
| US11011511B2 | Electrostatic discharge protection devices | Electricity | 2 | Active |
| US6165900A | Method for manufacturing semiconductor device | Electricity | 2 | Expired |
| US11575014B2 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
| US9929155B2 | Semiconductor device having symmetric and asymmetric active fins | Electricity | 1 | Active |
| US9048236B2 | Semiconductor device and method of fabricating the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.