Thin-film transistor with crystallized active layer, method of manufacturing the same, and organic light-emitting display device including the same
US10032922B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 25, 2015 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Sep 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
Abstract
A thin-film transistor, including a substrate; an active layer on the substrate; a gate electrode on the active layer; and a gate insulating layer between the active layer and the gate electrode, the active layer including a channel region; source and drain regions at opposite sides of the channel region; and lightly doped regions between the channel region and the source region and between the channel region and the drain region, the source and drain regions being doped with a first element, and the lightly doped regions being doped with a second element different from the first element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.