Oxide sputtering target, and thin film transistor using the same
US10032927B2 · kind B2 · utility
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Key dates
| Filing date | Dec 9, 2016 |
| Grant date | Jul 24, 2018 |
| Priority date | — |
| Expiry date | Dec 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.