Process for large-scale ammonothermal manufacturing of gallium nitride boules
US10036099B2 · kind B2 · utility
1Cited by
111References
23Claims
0Family size
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Key dates
| Filing date | Jan 16, 2015 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Jul 12, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2203/068
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.