Patent assignee · US · COMPANY

SLT Technologies, Inc.

33Patents
32Active
33Granted
55Portfolio score

Filing activity: Jul 28, 2011 → Feb 6, 2024

Most-cited patents

PatentTitleAreaCited byStatus
US10094017B2 Method and system for preparing polycrystalline group III metal nitride Chemistry; Metallurgy 8 Active
USRE47114E1 Polycrystalline group III metal nitride with getter and method of making General 7 Active
US10619239B2 Method and system for preparing polycrystalline group III metal nitride Chemistry; Metallurgy 6 Active
US10029955B1 Capsule for high pressure, high temperature processing of materials and methods of use Emerging Cross-Sectional Technologies 2 Active
US10648102B2 Oxygen-doped group III metal nitride and method of manufacture Chemistry; Metallurgy 2 Active
US11444216B2 Power photodiode structures, methods of making, and methods of use Electricity 1 Active
US11453956B2 Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate Electricity 1 Active
US10145026B2 Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules Chemistry; Metallurgy 1 Active
US11898269B2 Oxygen-doped group III metal nitride and method of manufacture Chemistry; Metallurgy 1 Active
US10604865B2 Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules Chemistry; Metallurgy 1 Active
US10036099B2 Process for large-scale ammonothermal manufacturing of gallium nitride boules Performing Operations; Transporting 1 Active
US12024795B2 Ultrapure mineralizer and improved methods for nitride crystal growth Chemistry; Metallurgy 1 Active
US12027635B2 Methods for coupling of optical fibers to a power photodiode Physics 0 Active
US10087550B2 Reusable nitride wafer, method of making, and use thereof Emerging Cross-Sectional Technologies 0 Active
US10145021B2 Apparatus for processing materials at high temperatures and pressures Emerging Cross-Sectional Technologies 0 Active
US10100425B2 Method for synthesis of high quality large area bulk gallium based crystals Electricity 0 Active
US11047041B2 Method and system for preparing polycrystalline group III metal nitride Chemistry; Metallurgy 0 Active
US11705322B2 Group III nitride substrate, method of making, and method of use Electricity 0 Active
US10301745B2 Large area, low-defect gallium-containing nitride crystals, method of making, and method of use Emerging Cross-Sectional Technologies 0 Active
US10174438B2 Apparatus for high pressure reaction Chemistry; Metallurgy 0 Active
USRE49677E1 Reusable nitride wafer, method of making, and use thereof General 0 Active
US10293318B2 Pressure release mechanism for capsule and method of use with supercritical fluids Emerging Cross-Sectional Technologies 0 Active
US12091771B2 Large area group III nitride crystals and substrates, methods of making, and methods of use Chemistry; Metallurgy 0 Active
US12252812B2 Ultrapure mineralizer and improved methods for nitride crystal growth Chemistry; Metallurgy 0 Active
US12351942B2 Oxygen-doped group III metal nitride and method of manufacture Chemistry; Metallurgy 0 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.