Gas-phase synthesis of epitaxial semiconductor wires from seed crystals
US10036101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Sep 27, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/62
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.