Patent · US Active

Gas-phase synthesis of epitaxial semiconductor wires from seed crystals

US10036101B2 · kind B2 · utility

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1References
20Claims
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Assignee

Inventors

Key dates

Filing dateSep 2, 2016
Grant dateJul 31, 2018
Priority date
Expiry dateSep 27, 2036

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B29/62
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.