QUNANO AB
57Patents
51Active
57Granted
52Portfolio score
Filing activity: May 4, 2001 → Apr 21, 2017 · 30 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7335908B2 | Nanostructures and methods for manufacturing the same | Emerging Cross-Sectional Technologies | 129 | Expired |
| US8063450B2 | Assembly of nanoscaled field effect transistors | Electricity | 81 | Active |
| US7829443B2 | Nitride nanowires and method of producing such | Emerging Cross-Sectional Technologies | 59 | Active |
| US8049203B2 | Nanoelectronic structure and method of producing such | Emerging Cross-Sectional Technologies | 56 | Active |
| US7354850B2 | Directionally controlled growth of nanowhiskers | Emerging Cross-Sectional Technologies | 46 | Expired |
| US8455857B2 | Nanoelectronic structure and method of producing such | Emerging Cross-Sectional Technologies | 43 | Active |
| US8067299B2 | Nanoelectronic structure and method of producing such | Emerging Cross-Sectional Technologies | 34 | Active |
| US8143658B2 | Charge storage nanostructure | Emerging Cross-Sectional Technologies | 33 | Active |
| US8183587B2 | LED with upstanding nanowire structure and method of producing such | Electricity | 30 | Active |
| US8309439B2 | Nitride nanowires and method of producing such | Emerging Cross-Sectional Technologies | 27 | Active |
| US7223444B2 | Particle deposition apparatus and methods for forming nanostructures | Electricity | 27 | Expired |
| US7608147B2 | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them | Chemistry; Metallurgy | 24 | Expired |
| US7528002B2 | Formation of nanowhiskers on a substrate of dissimilar material | Emerging Cross-Sectional Technologies | 19 | Expired |
| US7432522B2 | Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them | Emerging Cross-Sectional Technologies | 19 | Expired |
| US8330143B2 | Semiconductor nanowire transistor | Electricity | 18 | Active |
| US7682943B2 | Nanostructures and methods for manufacturing the same | Emerging Cross-Sectional Technologies | 18 | Active |
| US7911035B2 | Directionally controlled growth of nanowhiskers | Emerging Cross-Sectional Technologies | 18 | Active |
| US8084337B2 | Growth of III-V compound semiconductor nanowires on silicon substrates | Emerging Cross-Sectional Technologies | 16 | Active |
| US7745813B2 | Nanostructures and methods for manufacturing the same | Emerging Cross-Sectional Technologies | 15 | Active |
| US8138493B2 | Optoelectronic semiconductor device | Emerging Cross-Sectional Technologies | 15 | Active |
| US8450717B1 | Nanostructures and methods for manufacturing the same | Emerging Cross-Sectional Technologies | 15 | Active |
| US7910492B2 | Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them | Emerging Cross-Sectional Technologies | 11 | Active |
| US8227817B2 | Elevated LED | Emerging Cross-Sectional Technologies | 11 | Active |
| US7960260B2 | Formation of nanowhiskers on a substrate of dissimilar material | Emerging Cross-Sectional Technologies | 10 | Active |
| US8691011B2 | Method for metal-free synthesis of epitaxial semiconductor nanowires on si | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.