Method for cleaning wafer
US10037882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Jan 15, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for cleaning a wafer that has a pattern of recessed and projected portions formed on a surface thereof and contains at least one element selected from titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a surface of a recessed portion of the pattern. The method at least includes a pre-treating step of holding a cleaning liquid at least in the recessed portion of the pattern; a protective film forming step of holding a protective film forming chemical liquid, which is a chemical liquid containing a water-repellant protective film forming agent, at least in the recessed portion of the pattern after the pre-treating step; and a drying step of removing the liquids from the pattern by drying. The cleaning liquid is acidic if the protective film forming chemical liquid is basic, or is basic if the protective film forming chemical liquid is acidic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.