Semiconductor device with high thermal conductivity substrate and process for making the same
US10037899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2016 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Aug 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/3731
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a process of forming a high thermal conductivity substrate for an Aluminum/Gallium/Indium (III)-Nitride semiconductor device. According to an exemplary process, a semiconductor precursor including a substrate structure and a buffer structure is provided. The buffer structure is formed over the substrate structure and has a first buffer surface and a second buffer surface. Herein, the second buffer surface is adjacent to the substrate structure and the first buffer surface is opposite the second buffer surface. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first buffer surface. A heat sink carrier is then provided over the high thermal conductivity substrate. The substrate structure is then substantially removed to provide a thermally enhanced precursor for the III-Nitride semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.