Xing Gu
10Patents
2h-index
9Co-inventors
39Inventor score
Filing activity: Jul 29, 2011 → Jan 15, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9337278B1 | Gallium nitride on high thermal conductivity material device and method | Electricity | 191 | Active |
| US9972708B2 | Double heterojunction field effect transistor with polarization compensated layer | Electricity | 3 | Active |
| US10553782B2 | Passive magnetic devices | Electricity | 2 | Active |
| US10037899B2 | Semiconductor device with high thermal conductivity substrate and process for making the same | Electricity | 1 | Active |
| US8710511B2 | AIN buffer N-polar GaN HEMT profile | Electricity | 1 | Active |
| US10749009B1 | Process of fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistors | Electricity | 0 | Active |
| US10177247B2 | Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces | Electricity | 0 | Active |
| US11152677B2 | Integration of self-biased magnetic circulators with microwave devices | Electricity | 0 | Active |
| US10090172B2 | Semiconductor device with high thermal conductivity substrate and process for making the same | Electricity | 0 | Active |
| US10854810B2 | Passive magnetic devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.