Bond pad structure for bonding improvement

US10038026B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Sin-Yao Huang · Tainan, TW
• Ching-Chun Wang · Tainan, TW
• Dun-Nian Yaung · Taipei, TW
• Feng-Chi Hung · Kaohsiung, TW
• Ming-Tsong Wang · Taipei, TW
• Shih Pei Chou · Tainan, TW

Key dates

• Filing date: Apr 1, 2016
• Grant date: Jul 31, 2018
• Expiry date: Apr 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/18

Abstract

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3DIC includes a first substrate including a photodetector which is configured to receive light in a first direction from a light source. An interconnect structure is disposed over the first substrate, and includes a plurality of metal layers and insulating layers that are over stacked over one another in alternating fashion. One of the plurality of metal layers is closest to the light source and another of the plurality of metal layers is furthest from the light source. A bond pad recess extends into the interconnect structure from an opening in a surface of the 3DIC which is nearest the light source and terminates at a bond pad. The bond pad is spaced apart from the surface of the 3DIC and is in direct contact with the one of the plurality of metal layers that is furthest from the light source.