Feng-Chi Hung
136Patents
9h-index
68Co-inventors
79Inventor score
Filing activity: Feb 13, 2006 → Jul 21, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9728521B2 | Hybrid bond using a copper alloy for yield improvement | Electricity | 201 | Active |
| US9704827B2 | Hybrid bond pad structure | Electricity | 27 | Active |
| US8736006B1 | Backside structure for a BSI image sensor device | Electricity | 16 | Active |
| US9449914B2 | Stacked integrated circuits with redistribution lines | Electricity | 16 | Active |
| US9136298B2 | Mechanisms for forming image-sensor device with deep-trench isolation structure | Electricity | 12 | Active |
| US10515990B2 | Semiconductor devices having reduced noise | Electricity | 11 | Active |
| US9041206B2 | Interconnect structure and method | Electricity | 9 | Active |
| US10269768B2 | Stacked integrated circuits with redistribution lines | Electricity | 9 | Active |
| US9666624B2 | Mechanisms for forming image-sensor device with deep-trench isolation structure | Electricity | 9 | Active |
| US10038025B2 | Via support structure under pad areas for BSI bondability improvement | Electricity | 8 | Active |
| US9123615B2 | Vertically integrated image sensor chips and methods for forming the same | Electricity | 7 | Active |
| US9525001B2 | Semiconductor device and manufacturing method thereof | Electricity | 7 | Active |
| US10461109B2 | Multiple deep trench isolation (MDTI) structure for CMOS image sensor | Electricity | 7 | Active |
| US9455158B2 | 3DIC interconnect devices and methods of forming same | Electricity | 6 | Active |
| US9006080B2 | Varied STI liners for isolation structures in image sensing devices | Electricity | 6 | Active |
| US10566374B2 | Via support structure under pad areas for BSI bondability improvement | Electricity | 5 | Active |
| US9871070B2 | Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors | Electricity | 5 | Active |
| US9666630B2 | Semiconductor devices, methods of manufacturing thereof, and image sensor devices | Electricity | 5 | Active |
| US9312294B2 | Semiconductor devices, methods of manufacturing thereof, and image sensor devices | Electricity | 5 | Active |
| US10038026B2 | Bond pad structure for bonding improvement | Electricity | 5 | Active |
| US8952497B2 | Scribe lines in wafers | Electricity | 5 | Active |
| US9666566B1 | 3DIC structure and method for hybrid bonding semiconductor wafers | Electricity | 5 | Active |
| US7453127B2 | Double-diffused-drain MOS device with floating non-insulator spacers | Electricity | 5 | Expired |
| US9224770B2 | Image sensor device and method | Electricity | 5 | Active |
| US9287312B2 | Imaging sensor structure and method | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.