Semiconductor devices, a semiconductor diode and a method for forming a semiconductor device

US10038105B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Basler · Riemerling, DE
• Joachim Mahler · Regensburg, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Aug 5, 2016
• Grant date: Jul 31, 2018
• Expiry date: Aug 19, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A semiconductor device includes at least one highly doped region of an electrical device arrangement formed in a semiconductor substrate and a contact structure including an NTC (negative temperature coefficient of resistance) portion arranged adjacent to the at least one highly doped region at a front side surface of the semiconductor substrate. The NTC portion includes a negative temperature coefficient of resistance material.