MRAM device and method for fabricating the same
US10038137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2016 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Sep 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a magnetoresistive random access memory (MRAM) device in an insulating layer. The MRAM device includes a first electrode, a magnetic tunnel junction (MTJ) over the first electrode, a second electrode over the MTJ, and an insulating spacer surrounding sidewalls of the first electrode, the MTJ, and the second electrode. Top surfaces of the insulating spacer and the second electrode are exposed from the insulating layer. The semiconductor device structure also includes a conductive pad over the insulating layer and electrically connected to the second electrode. The MTJ is entirely covered by the conductive pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.