Optoelectronic integrated circuit
US10038302B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Mar 6, 2017 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Mar 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.