Geoff W. Taylor
69Patents
14h-index
8Co-inventors
77Inventor score
Filing activity: Jul 3, 1978 → Sep 13, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6031243A | Grating coupled vertical cavity optoelectronic devices | Electricity | 120 | Expired |
| US6479844B2 | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit | Physics | 80 | Expired |
| US6849866B2 | High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration | Electricity | 56 | Expired |
| US6870207B2 | III-V charge coupled device suitable for visible, near and far infra-red detection | Emerging Cross-Sectional Technologies | 47 | Expired |
| US6841795B2 | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation | Electricity | 40 | Expired |
| US6873273B2 | Photonic serial digital-to-analog converter employing a heterojunction thyristor device | Electricity | 40 | Expired |
| US6853014B2 | Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling | Electricity | 38 | Expired |
| US6954473B2 | Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay | Electricity | 36 | Expired |
| US7332752B2 | Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal | Electricity | 35 | Expired |
| US6936839B2 | Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same | Electricity | 34 | Expired |
| US6995407B2 | Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices | Electricity | 31 | Expired |
| US7012274B2 | Modulation doped thyristor and complementary transistors combination for a monolithic optoelectronic integrated circuit | Physics | 17 | Expired |
| US9082637B2 | Optoelectronic integrated circuit | Electricity | 15 | Active |
| US7173293B2 | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation | Electricity | 14 | Expired |
| US7064697B2 | Photonic sigma delta analog-to-digital conversation employing dual heterojunction thyristors | Electricity | 14 | Expired |
| US7247892B2 | Imaging array utilizing thyristor-based pixel elements | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7551826B2 | Integrated circuit employing low loss spot-size converter | Electricity | 10 | Active |
| US6974969B2 | P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer | Electricity | 10 | Expired |
| US6841806B1 | Heterojunction thyristor-based amplifier | Electricity | 10 | Expired |
| US9377587B2 | Fiber optic coupler array | Physics | 9 | Active |
| US7333731B2 | Multifunctional optoelectronic thyristor and integrated circuit and optical transceiver employing same | Electricity | 9 | Expired |
| US7176046B2 | Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit | Electricity | 7 | Expired |
| USRE38682E1 | Grating coupled vertical cavity optoelectronic devices | General | 7 | Expired |
| US9188798B2 | Optical closed loop microresonator and thyristor memory device | Emerging Cross-Sectional Technologies | 6 | Active |
| US7262429B2 | Thz detection employing modulation doped quantum well device structures | Emerging Cross-Sectional Technologies | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.